FDS6900AS

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FDS6900AS

May 2005

FDS6900AS
General Description

Dual N-Ch PowerTrench SyncFETTM
Features
Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) 22m VGS 10V RDS(on) 28m VGS 4.5V Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) 27m VGS 10V RDS(on) 34m VGS 4.5V 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology.

8.2A, 30V

6.9A, 30V

S1D2 D S1D2 D S1D2 D G1 D

1
2
3
Q2 Q1

8
7
6
5
Dual N-Channel SyncFet

SO-8
Pin 1

SO-

D1 D1 S

S2 G2 G

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage

TA 25 C unless otherwise noted

Parameter

Q2
30
(Note 1a)

Q1
30 20 6.9 20 2 1.6 1 0.9 55 to 150

Units
V V A W

- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Drain Current

20 8.2 30

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6900AS FDS6900AS Device FDS6900AS FDS6900AS NL (Note 4) Reel Size 13" 13" Tape width 12mm 12mm Quantity 2500 units 2500 units
FDS6900AS Rev B(X)

2005 Fairchild Semiconductor Corporation