FDS6912

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDS6912

July 2000

FDS6912
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
6 A, 30 V. RDS(ON) 0.028 VGS 10 V RDS(ON) 0.042 VGS 4.5 V.

Optimized for use in switching DC/DC converters with PWM controllers Very fast switching. Low gate charge

D1 D1 D2 D2 S1 G1
5 6 7
Q1

4 3 2
Q2

SO-8
S2

8

1

G2

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25 C unless otherwise noted

o

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

6 20 2

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1 0.9 -55 to 150 C

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6912 Device FDS6912 Reel Size 13 Tape width 12mm Quantity 2500 units

2000 Fairchild Semiconductor Corporation

FDS6912 Rev F (W)

FDS6912 Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDS6912 datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDS6912

FDS6912 DATASHEET