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FDS6930A

By datasheet - April 3rd, 2008

October 1998

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October 1998

FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description Features
5.5 A, 30 V. RDS(ON) 0.040 VGS 10 V RDS(ON) 0.055 VGS 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

D2 D1 D1 D2

5 6

4 3 2 1

S FD 0A 3 69
G1 S2 G2

7 8

SO-8

pin 1

S1

Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

TA 25oC unless otherwise noted FDS6930A 30 20
(Note 1a)

Units V V A

5.5 20

Power Dissipation for Dual Operation Power Dissipation for Single Operation

(Note 1) (Note 1a) (Note 1b) (Note 1c)

2 1.6 1 0.9 -55 to 150

W W

TJ,TSTG RJA RJC

Operating and Storage Temperature Range

C

THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

1998 Fairchild Semiconductor Corporation

FDS6930A Rev.D

FDS6930A Datasheet Fairchild Download PDF

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