April 1999

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April 1999

FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
3.5 A, 30 V. RDS(ON) 0.090 VGS 10 V RDS(ON) 0.140 VGS 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

SOT-23

SuperSOTTM -6

SuperSOTTM -8

SO-8

SOT-223

SOIC-16

D2 D1 D1 D2

S FD 1A 6 69
S2 G2

5 6 7

4 3 2 1

SO-8

pin 1

S1

G1

8

Absolute Maximum Ratings
Symbol Parameter

TA 25oC unless other wise noted
Ratings Units

VDSS VGSS ID PD

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation
(Note 1) (Note 1a) (Note 1b) (Note 1c) (Note 1a)

30 20 3.5 14 2 1.6 1 0.9 -55 to 150

V V A

W

TJ,TSTG RJA RJC

Operating and Storage Temperature Range

C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

C/W C/W
FDS6961A Rev.C

1999 Fairchild Semiconductor Corporation

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FDS6961A DATASHEET