FDS6982AS

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FDS6982AS

December 2006

FDS6982AS
General Description

Dual Notebook Power Supply N-Channel PowerTrench SyncFETTM
Features
Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) max 13.5m VGS 10V RDS(on) max 16.5m VGS 4.5V Low gate charge (21nC typical) Q1: Optimized for low switching losses RDS(on) max 28.0m VGS 10V RDS(on) max 35.0m VGS 4.5V Low gate charge (11nC typical) The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology.

8.6A, 30V

6.3A, 30V

Applications
Notebook

D1 D1 D2 D2 S1 G1
5 6 7
Q1

4 3 2
Q2

SO-8
S2

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current

TA 25 C unless otherwise noted

Parameter

Q2
30
(Note 1a)

Q1
30 20 6.3 20 2 1.6 1 0.9 55 to 150

Units
V V A W

- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

20 8.6 30

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6982AS FDS6982AS FDS6982AS Device FDS6982AS FDS6982AS NL (Note 4) FDS6982AS NF40 (Note 5) Reel Size 13" 13" 13" Tape width 12mm 12mm 12mm Quantity 2500 units 2500 units 2500 units
FDS6982AS Rev B

2006 Fairchild Semiconductor Corporation