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FDS6990A

By datasheet - April 3rd, 2008

FDS6990A

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FDS6990A

June 2003

FDS6990A
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
7.5 A, 30 V. RDS(ON) 18 m VGS 10 V RDS(ON) 23 m VGS 4.5 V

Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability

D2 D

D2 D

DD1 D1 D

5 6 7
Q1

4 3 2
Q2

SO-8
Pin 1 SO-8
G2 S2 S

G1 S1 G

S

8

1

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

7.5 20 1.6 1.0 0.9 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6990A Device FDS6990A Reel Size 13 Tape width 12mm Quantity 2500 units

2003 Fairchild Semiconductor Corporation

FDS6990A Rev D(W)

FDS6990A Datasheet Fairchild Download PDF

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