FDS7060N7

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FDS7060N7

May 2003

FDS7060N7
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features
19 A, 30 V. RDS(ON) 5 m VGS 10 V RDS(ON) 7 m VGS 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching, low gate charge (35nC typical) FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

Applications
Synchronous rectifier DC/DC converter

5 6 7 8

Bottom-side Drain Contact

4 3 2 1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W C

19 60 3.0 55 to 150

Power Dissipation for Single Operation

(Note 1a)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

40 0.5

C/W C/W

Package Marking and Ordering Information
Device Marking FDS7060N7 Device FDS7060N7 Reel Size 13 Tape width 12mm Quantity 2500 units

2002 Fairchild Semiconductor Corporation

FDS7060N7 Rev C1 (W)

FDS7060N7 Datasheet Fairchild Download PDF

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FDS7060N7 DATASHEET