FDS7066ASN3

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FDS7066ASN3

August 2004

FDS7066ASN3
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066ASN3 includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. The performance of the FDS7066ASN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode.

Features
19 A, 30 V RDS(ON) 4.8 m VGS 10 V RDS(ON) 6.0 m VGS 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

Applications
DC/DC converter

5 6 7 8

Bottom-side Drain Contact

4 3 2 1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W C

19 60 3.0 1.7 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

40 0.5

C/W C/W

Package Marking and Ordering Information
Device Marking FDS7066ASN3 Device FDS7066ASN3 Reel Size 13 Tape width 12mm Quantity 2500 units

2004 Fairchild Semiconductor Corporation

FDS7066ASN3 Rev A (W)

FDS7066ASN3 Datasheet Fairchild Download PDF

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FDS7066ASN3 DATASHEET