FDS7066N3

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FDS7066N3

February 2004

FDS7066N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features
23 A, 30 V RDS(ON) 5.5 m VGS 10 V RDS(ON) 6.5 m VGS 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

Applications
Synchronous rectifier DC/DC converter

5 6 7 8

Bottom-side Drain Contact

4 3 2 1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 16
(Note 1a)

Units
V V A W C

23 60 3.0 1.7 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

40 0.5

C/W C/W

Package Marking and Ordering Information
Device Marking FDS7066N3
2004 Fairchild Semiconductor Corporation

Device FDS7066N3

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS7066N3 Rev B2 (W)

FDS7066N3 Datasheet Fairchild Download PDF

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FDS7066N3 DATASHEET