FDS7079ZN3

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FDS7079ZN3

February 2004

FDS7079ZN3
30 Volt P-Channel PowerTrench MOSFET
General Description
Advanced P Channel MOSFET combined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Features 16 A, 30 V. RDS(ON) 7.5 m VGS 10 V RDS(ON) 11.5 m VGS 4.5 V ESD protection diode (note 3) ESD rating: 4kV High performance trench technology for extremely low RDS(ON) FLMP SO-8 package for enhanced thermal performance in industry-standard package size

NC D NC D NC D NC D
FLMP SO-8

D

Bottom Side Drain Contact

5 6

4 3 2 1

Pin 1SO-

G S G S S S S S
TA 25oC unless otherwise noted

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W C

16 60 3.13 1.5 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

40 0.5

C/W

Package Marking and Ordering Information
Device Marking FDS7079ZN3
2004 Fairchild Semiconductor Corporation

Device FDS7079ZN3

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS7079ZN3 Rev C1 (W)

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FDS7079ZN3 DATASHEET