FDS7082N3

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FDS7082N3

February 2004

FDS7082N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.

Features
17.5 A, 30 V RDS(ON) 6 m VGS 10 V RDS(ON) 8 m VGS 4.5 V High performance trench technology for extremely low RDS(ON) Low Qg and Rg for fast switching FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline.

Applications
Secondary side Synchronous rectifier Synchronous Buck VRM and POL Converters

5 6 7 8

Bottom-side Drain Contact

4 3 2 1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W C

17.5 60 3.0 1.5 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

40 0.5

C/W C/W

Package Marking and Ordering Information
Device Marking FDS7082N3 Device FDS7082N3 Reel Size 13 Tape width 12mm Quantity 2500 units

2004 Fairchild Semiconductor Corporation

FDS7082N3 Rev D1 (W)

FDS7082N3 Datasheet Fairchild Download PDF

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FDS7082N3 DATASHEET