FDS7096N3

FDS7096N3

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FDS7096N3

January 2004

FDS7096N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features
14 A, 30 V RDS(ON) 9 m VGS 10 V RDS(ON) 12 m VGS 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

Applications
DC/DC converter Power management Load switch

5 6 7 8

Bottom-side Drain Contact

4 3 2 1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W C

14 60 3.0 1.5 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

40 0.5

C/W

Package Marking and Ordering Information
Device Marking FDS7096N3
2004 Fairchild Semiconductor Corporation

Device FDS7096N3

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS7096N3 Rev E2 (W)

FDS7096N3 Datasheet Fairchild Download PDF

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