FDS7764S
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FDS7764S
September 2002
FDS7764S
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7764S includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology.
Features
13.5 A, 30 V. RDS(ON) 7.5 m VGS 10 V RDS(ON) 9.0 m VGS 4.5 V Includes SyncFET Schottky body diode Low gate charge (25 nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability
Applications
DC/DC converter Motor drives
D D
D
D
5 6 4 3 2 1
SO8
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA 25oC unless otherwise noted
Parameter
Ratings
30 16
(Note 1a)
Units
V V A W
13.5 50 2.5 1.2 1.0 55 to 150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 30
C/W
Package Marking and Ordering Information
Device Marking FDS7764S Device FDS7764S Reel Size 13 Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS7764S Rev D (W)
FDS7764S Datasheet Fairchild Download PDF
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