FDS7788

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FDS7788

February 2005

FDS7788
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features
18 A, 30 V. RDS(ON) 4.0 m VGS 10 V RDS(ON) 5.0 m VGS 4.5 V Low gate charge Fast switching speed High power and current handling capability High performance trench technology for extremely low RDS(ON)

Applications
DC/DC converter Load switch Motor drives

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

18 50 2.5 1.2 1.0 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 30

C/W C/W

Package Marking and Ordering Information
Device Marking FDS7788 Device FDS7788 Reel Size 13 Tape width 12mm Quantity 2500 units

2005 Fairchild Semiconductor Corporation

FDS7788 Rev F (W)

FDS7788 Datasheet Fairchild Download PDF

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FDS7788 DATASHEET