FDS8333C

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDS8333C

August 2002

FDS8333C
30V N P-Channel PowerTrench MOSFETs
General Description
These N P-Channel MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
Q1 4.1 A, 30V. RDS(ON) 80 m V GS 10 V RDS(ON) 130 m V GS 4.5 V 3.4 A, 30V. RDS(ON) 130 m V GS 10 V RDS(ON) 200 m V GS 4.5 V

Q2

Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package.
Q2

D1 D

D1 D

DD2 D2 D

5 6
Q1

4 3 2 1

SO-8
Pin 1 SO-8

G2 S2 G G1 S S1 S

7 8

S

Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

TA 25oC unless otherwise noted

Parameter

Q1
30 16
(Note 1a)

Q2
30 20 3.4 20 2 1.6 1 0.9 55 to 150

Units
V A

4.1 20

Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

W

TJ , TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W

Package Marking and Ordering Information
Device Marking FDS8333C Device FDS8333C Reel Size 7 Tape width 12mm Quantity 2500 units

2002 Fairchild Semiconductor Corporation

FDS8333C Rev C (W)

FDS8333C Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDS8333C datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDS8333C

FDS8333C DATASHEET