FDS8433A

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FDS8433A

September 2000

FDS8433A
Single P-Channel 2.5V Specified MOSFET
General Description
This P-Channel enhancement mode power field effect transistors is produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.

Features
-5 A, -20 V. RDS(on) 0.047 VGS -4.5 V RDS(on) 0.070 VGS -2.5 V

Fast switching speed. High density cell design for extremely low RDS(on). High power and current handling capability.

Applications
Load switch DC/DC converter Battery protection

D D D

D

5 6 7

4 3 2 1

SO-8

S

S

S

G
8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

TA 25 C unless otherwise noted

Parameter

FDS8433A
-20
(Note 1a)

Units
V V A W

8 -5 -50 2.5 1.2 1 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, Tstg

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Outlines and Ordering Information
Device Marking
FDS8433A

Device
FDS8433A

Reel Size
13

Tape Width
12mm

Quantity
2500 units

2000 Fairchild Semiconductor International

FDS8433A Rev. C

FDS8433A Datasheet Fairchild Download PDF

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FDS8433A DATASHEET