Home

FDS8958

By datasheet - April 3rd, 2008

FDS8958

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDS8958

October 2004

FDS8958
Dual N P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
Q1: N-Channel RDS(on) 0.028 VGS 10V RDS(on) 0.040 VGS 4.5V Q2: P-Channel RDS(on) 0.052 VGS -10V RDS(on) 0.080 VGS -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V

-5A, -30V

D1 D

D1 D

DD2 D2 D

5 6

Q2

4 3

Q1

SO-8
Pin 1 SO-8

G1 S1 S

G2 S2 G

7 8

2 1

S

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage

TA 25 C unless otherwise noted

Parameter

Q1
30
(Note 1a)

Q2
30 20 -5 -20 2 1.6 1 0.9 -55 to 150

Units
V V A W

- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Drain Current

20 7 20

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C C/W C/W

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

Package Marking and Ordering Information
Device Marking FDS8958 Device FDS8958 Reel Size 13" Tape width 12mm Quantity 2500 units

2004 Fairchild Semiconductor Corporation

FDS8958 Rev A(W)

FDS8958 Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDS8958 datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDS8958

-->