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FDS8958A

By datasheet - April 3rd, 2008

FDS8958A

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FDS8958A

February 2007

FDS8958A
Dual N P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

tm

Features
Q1: N-Channel RDS(on) 0.028 VGS 10V RDS(on) 0.040 VGS 4.5V Q2: P-Channel RDS(on) 0.052 VGS -10V RDS(on) 0.080 VGS -4.5V Fast switching speed High power and handling capability in a widely used surface mount package -5A, -30V 7.0A, 30V

D1 D

D1 D

DD2 D2 D

5 6
G2 S2 G

Q2

4 3

SO-8
Pin 1 SO-8

7 8

Q1

2 1

G1 S1 S

S

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous

TA 25 C unless otherwise noted

Parameter

Q1
30
(Note 1a)

Q2
30 20 -5 -20 2 1.6 0.9 13 -55 to 150

Units
V V A W mJ C

20 7 20 2 1.6 0.9 54

- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy

(Note 1a) (Note 1c)

EAS TJ, TSTG

(Note 3)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking Device Reel Size

Tape width

Quantity

FDS8958A
2007 Fairchild Semiconductor Corporation

FDS8958A

13"

12mm

2500 units
FDS8958A Rev F1(W)

FDS8958A Datasheet Fairchild Download PDF

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