FDS9400A

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FDS9400A

December 2001

FDS9400A
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

Features
3.4 A, 30 V RDS(ON) 130 m VGS 10 V RDS(ON) 200 m VGS 4.5 V

Low gate charge (2.4nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
Power management Load switch Battery protection

D D SO-8

D D

DD D D

5 6

4 3 2 1

Pin 1 SO-8

G S G S S S S S
TA 25oC unless otherwise noted

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

3.4 10 2.5 1.2 1 55 to 175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)

50 125 25

C/W C/W C/W

Package Marking and Ordering Information
Device Marking FDS9400A
2001 Fairchild Semiconductor Corporation

Device FDS9400A

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS9400A Rev B1(W)

FDS9400A Datasheet Fairchild Download PDF

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FDS9400A DATASHEET