FDS9412

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FDS9412

April 2000

FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed.

Features
7.9 A, 30 V. RDS(ON) 22 m VGS 10 V RDS(ON) 36 m VGS 4.5 V

Very low gate charge. High switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package.

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25 C unless otherwise noted

o

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

7.9 24 2.5 1.2 1.0 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS9412 Device FDS9412 Reel Size 13 Tape width 12mm Quantity 2500 units

2000 Fairchild Semiconductor Corporation

FDS9412 Rev D(W)

FDS9412 Datasheet Fairchild Download PDF

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FDS9412 DATASHEET