FDS9431A

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FDS9431A

September 1999

FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features
-3.5 A, -20 V. RDS(ON) 0.130 VGS -4.5 V RDS(ON) 0.180 VGS -2.5 V.

Fast switching speed. High density cell design for extremely low RDS(ON). High power and current handling capability.

Applications
DC/DC converter Power management Load switch Battery protection

D D

D

D

5 6 7

4 3 2 1

SO-8

S

S

S

G
8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

T A 25oC unless otherwise noted

Parameter

Ratings
-20 8
(Note 1a)

Units
V V A W

-3.5 -18 2.5 1.2 1.0 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, Tstg

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS9431A
1999 Fairchild Semiconductor Corporation

Device FDS9431A

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS9431A Rev. A2

FDS9431A Datasheet Fairchild Download PDF

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FDS9431A DATASHEET