FDS9435A

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FDS9435A

October 2001

FDS9435A
30V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

Features
5.3 A, 30 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability RDS(ON) 50 m V GS 10 V RDS(ON) 80 m V GS 4.5 V

Applications
Power management Load switch Battery protection

D D SO-8

DD

DD D D

5 6 7

4 3 2 1

Pin 1 SO-8

G S G S S S S S
TA 25oC unless otherwise noted

8

Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

5.3 50 2.5 1.2 1 55 to 175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)

50 125 25

C/W C/W C/W

Package Marking and Ordering Information
Device Marking FDS9435A
2001 Fairchild Semiconductor Corporation

Device FDS9435A

Reel Size 13

Tape width 12mm

Quantity 2500 units

FDS9435A Rev D1(W)

FDS9435A Datasheet Fairchild Download PDF

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FDS9435A DATASHEET