FDS9926A

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FDS9926A

July 2003

FDS9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 10V). Features 6.5 A, 20 V. RDS(ON) 30 m VGS 4.5 V RDS(ON) 43 m VGS 2.5 V.

Optimized for use in battery protection circuits Low gate charge

Applications
Battery protection Load switch Power management

5 6 7 8
Q2 Q1

4 3 2 1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
20 10
(Note 1a)

Units
V A W

6.5 20 2

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1 0.9 55 to 150 C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W

Package Marking and Ordering Information
Device Marking FDS9926A Device FDS9926A Reel Size 13 Tape width 12mm Quantity 2500 units

2003 Fairchild Semiconductor Corp.

FDS9926A Rev E (W)

FDS9926A Datasheet Fairchild Download PDF

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FDS9926A DATASHEET