FDS9933

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FDS9933

September 2006

FDS9933
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Features
5 A, 20 V, RDS(ON) 55 m VGS 4.5 V RDS(ON) 90 m VGS 2.5 V

Extended VGSS range ( 12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
Load switch Motor drive DC/DC conversion Power management

D2 D

D2 D

DD1 D1 D

5 6 7
Q1

4 3 2
Q2

SO-8
Pin 1 SO-8
G2 S2 S

G1 S1 G

S

8

1

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W

5 30 2 1.6 1 0.9 55 to 175

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking 9933
2006 Fairchild Semiconductor International

Device FDS9933

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS9933 Rev C

FDS9933 Datasheet Fairchild Download PDF

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FDS9933 DATASHEET