FDS9933A

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FDS9933A

November 1998

FDS9933A
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features -3.8 A, -20 V. RDS(on) 0.075
Low gate charge ( 7nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. VGS -4.5 V RDS(on) 0.105 VGS -2.5 V.

Applications Load switch DC/DC converter Motor drives

D2 D1 D1 G2 D2

5 6 7 8

4 3 2 1

SO-8

pin 1

S1

G1

S2

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

TA 25 C unless otherwise noted

o

Parameter

FDS9933A
-20
(Note 1a)

Units
V V A W

8 -3.8 -20 2.0

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1.0 0.9 -55 to 150 C

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking FDS9933A Device FDS9933A Reel Size 13 Tape width 12mm

Quantity
2500 units

1998 Fairchild Semiconductor Corporation

FDS9933A Rev. C

FDS9933A Datasheet Fairchild Download PDF

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FDS9933A DATASHEET