FES16DTR

FES16AT - FES16JT

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FES16AT - FES16JT

Features
PIN 1

CASE

Low forward voltage drop.
PIN 3

High surge current capacity. High current capability. High reliability.
1 2

Case Positive PIN 1 PIN 3 Case Negative Suffix "R" -

TO-220AC

Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM
TA 25 C unless otherwise noted

Parameter
16AT 16BT 16CT

Value
16DT 16FT 16GT 16HT 16JT

Units
400 500 600 V A

Tstg TJ

Maximum Repetitive Reverse Voltage Average Rectified Forward Current, .375 " lead length TA 100 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature

100

150

200

300 16

250 -65 to 150 -65 to 150

A V pF

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL

Parameter
Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead
TA 25 C unless otherwise noted

Value
7.81 16 1.2

Units
W C/W C/W

Electrical Characteristics
Symbol
VF trr IR

Parameter
16AT 16BT 16CT

Device
16DT 16FT 16GT 16HT 16JT

Units
1.3 50 1.5 V ns A A pF

Forward Voltage 8.0A Reverse Recovery Time IF 0.5 A, IR 1.0 A, IRR 0.25 A Reverse Current rated VR TA 25 C TA 100 C Total Capacitance VR 4.0. f 1.0 MHz

0.95 35 10 500 170

145

2001 Fairchild Semiconductor Corporation

FES16AT - FES16JT, Rev. C