FF1N30HS60DD

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FF1N30HS60DD

May 2003

FF1N30HS60DD
30A, 600V StealthTM Diode
General Description
The FF1N30HS60DD is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411.

Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta 1.2 Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr 35ns Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Fully Isolated Package (2,500 volt AC) Extremely Low Switching Losses Avalanche Energy Rated

Applications
Switch Mode Power Supplies Hard Switched CCM PFC Boost Diode UPS and Motor Drive Free Wheeling Diode SMPS FWD Snubber Diode

Package
JEDEC SOT-227

Symbol
K K

Device Maximum Ratings (per diode) TC 25 C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG Md TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC 110oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Mounting force Terminal connection torque Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 30 70 325 136 20 -55 to 175 1.5/13 1.5/13 300 260 Units V V V A A A W mJ C Nm/lb.in. Nm/lb.in. C C

CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA