FFB2222A

FFB2222A / FMB2222A / MMPQ2222A

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FFB2222A / FMB2222A / MMPQ2222A

FFB2222A
E2 B2 C1

FMB2222A
C2 E1 C1

MMPQ2222A
E2 B2 E3 B3 E4 B4

SC70-6
Mark: .1P
pin 1

C2 B1 E1
pin 1 B1

B2 E2

SOIC-16
Mark: MMPQ2222A
pin 1 C1

NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

SuperSOT-6
Mark: .1P
Dot denotes pin 1

C2 C1

C3 C2

C4 C4 C3

NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
40 75 5.0 500 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415

Max
FMB2222A 700 5.6 180 MMPQ2222A 1,000 8.0 125 240

Units
mW mW/ C C/W C/W C/W

1998 Fairchild Semiconductor Corporation