FFB2907A

FFB2907A / FMB2907A / MMPQ2907A

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FFB2907A / FMB2907A / MMPQ2907A

FFB2907A
E2 B2 C1

FMB2907A
C2 E1 C1

MMPQ2907A
E2 B2 E3 B3 E4 B4

SC70-6
Mark: .2F
pin 1

C2 B1 E1
pin 1 B1

B2 E2

SOIC-16
Mark: MMPQ2907A
pin 1 C1

NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

SuperSOT-6
Mark: .2F
Dot denotes pin 1

C2 C1

C3 C2

C4 C4 C3

PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
60 60 5.0 600 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.4 415

Max
FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240

Units
mW mW/ C C/W C/W C/W

1998 Fairchild Semiconductor Corporation