FFB3906

FFB3906 / FMB3906 / MMPQ3906

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FFB3906 / FMB3906 / MMPQ3906

FFB3906
E2 B2 C1

FMB3906
C2 E1 C1 E1

MMPQ3906
E2 B2 E3 B3 E4 B4

SC70-6
Mark: .2A
pin 1

C2 B1 E1
pin 1 B1

B2 E2 C2 C1 C3 C2

C4 C4 C3

NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

SuperSOT-6
Mark: .2A
Dot denotes pin 1

SOIC-16
Mark: MMPQ3906

pin 1 C1

PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Sourced from Process 66.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
40 40 5.0 200 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3906 300 2.4 415

Max
FMB3906 700 5.6 180 MMPQ3906 1,000 8.0 125 240

Units
mW mW/ C C/W C/W C/W

1998 Fairchild Semiconductor Corporation