FFB5551

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FFB5551

FFB5551
Dual-Chip NPN General Purpose Amplifier
This device is deisgned for general purpose high voltage amplifiers. E1 is Pin 1.
C1 E2 B2

C2 B1 E1

SC70-6

Mark: .P1

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 160 180 6.0 200 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC 1.0mA, IB 0 IC 100 A, IE 0 IE 10 A, IC 0 VCB 120V, IE 0 VCB 120V, IE 0, TA 100 C VEB 4.0V, IC 0 VCE 5.0V, IC 1.0mA VCE 5.0V, IC 10mA VCE 5.0V, IC 50mA IC 10mA, IB 1.0mA IC 50mA, IB 5.0mA IC 10mA, IB 1.0mA IC 50mA, IB 5.0mA VCE 10V, IC 10mA f 100MHz VCB 10V, IE 0, f 1.0MHz 100 80 80 30 Min. 160 180 6.0 50 50 50 Max. Units V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

On Characteristics 250 0.15 0.20 1.0 1.0 300 6.0 V V

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Small Signal Characteristics fT Cobo Current gain Bandwidth Product Output Capacitance MHz pF

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2003 Fairchild Semiconductor Corporation

Rev. A, June 2003

FFB5551 Datasheet Fairchild Download PDF

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FFB5551 DATASHEET