FGA120N30D

FGA120N30D 300V PDP IGBT

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FGA120N30D 300V PDP IGBT

June 2006

FGA120N30D
300V PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat), Typ 1.1V IC 25A High Input Impedance

Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

G
TO-3P
G C E

E
TC 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL
Notes:

Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current
(Note 1)

FGA120N30D
300 30 TC 25 C TC 25 C TC 100 C TC 25 C TC 100 C 120 300 10 40 290 116 -55 to 150 -55 to 150 300

Units
V V A A A A W W C C C

Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

(1) Repetitive test , pulse width 100usec , Duty 0.2 Ic pulse limited by max Tj

Thermal Characteristics
Symbol
RJC(IGBT) RJC(DIODE) RJA

Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

Typ.
----

Max.
0.43 1.56 40

Units
C/W C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGA120N30D Rev. B