FGA15N120ANTD

FGA15N120ANTD 1200V NPT Trench IGBT

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FGA15N120ANTD 1200V NPT Trench IGBT

May 2006

FGA15N120ANTD
1200V NPT Trench IGBT
Features
NPT Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), typ 1.9V IC 15A and TC 25 C Low switching loss: Eoff, typ 0.6mJ IC 15A and TC 25 C Extremely enhanced avalanche capability

Description
Using Fairchild s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

G
G C E

TO-3P

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current
(Note 1)

Description
Collector-Emitter Voltage TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGA15N120ANTD
1200 20 30 15 45 15 45 186 74 -55 to 150 -55 to 150 300

Units
V V A A A A A W W C C C

Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJC RJC RJA

Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

Typ.
----

Max.
0.67 2.88 40

Units
C/W C/W C/W

Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGA15N120ANTD Rev. A1