FGA180N30D

FGA180N30D 300V PDP IGBT

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FGA180N30D 300V PDP IGBT

June 2006

FGA180N30D
300V PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat), Typ 1.1 V IC 40A High Input Impedance

Description
Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.

G
TO-3P
G C E

Absolute Maximum Rating TC 25oC unless otherwise noted
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL
Notes:

Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current
(Note 1)

FGA180N30D
300 30 TC 25 C TC 25 C TC 100 C TC 25 C TC 100 C 180 450 10 40 480 192 -55 to 150 300 300

Units
V V A A A A W W C C C

Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

(1) Repetitive test , pulse width 100usec , Duty 0.2 Ic pulse limited by max Tj

Thermal Characteristics
Symbol
RJC RJC RJA

Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

Typ.
----

Max.
0.26 1.56 40

Units
C/W C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGA180N30D Rev. B