FGA25N120ANTD

FGA25N120ANTD 1200V NPT Trench IGBT

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FGA25N120ANTD 1200V NPT Trench IGBT

September, 2006

FGA25N120ANTD
1200V NPT Trench IGBT
Features
NPT Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), typ 2.0V IC 25A and TC 25 C Low switching loss: Eoff, typ 0.96mJ IC 25A and TC 25 C Extremely enhanced avalanche capability

Description
Using Fairchild s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

G
G C E

TO-3P

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current
(Note 1)

Description
Collector-Emitter Voltage TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGA25N120ANTD
1200 20 50 25 90 25 150 312 125 -55 to 150 -55 to 150 300

Units
V V A A A A A W W C C C

Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJC RJC RJA

Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

Typ.
----

Max.
0.4 2.0 40

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGA25N120ANTD Rev. B1