FGA50N100BNTD

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

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FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

January 2006

FGA50N100BNTD
1000V, 50A NPT-Trench IGBT CO-PAK
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications

Features
High Speed Switching Low Saturation Voltage: VCE(sat) 2.5V IC 60A High Input Impedance Built-in Fast Recovery Diode

Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

G
G C E

TO-3P

E
TC 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGA50N100BNTD 1000 25 50 35 100 15 156 63 -55 to 150 -55 to 150 300

Units V V A A A A W W C C C

Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.8 2.4 25 Units C/W C/W C/W

2006 Fairchild Semiconductor Corporation FGA50N100BNTD Rev. A

www.fairchildsemi.com