FGA90N30

FGA90N30 300V PDP IGBT

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FGA90N30 300V PDP IGBT

September 2006

FGA90N30
300V PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat), Typ 1.1V IC 20A High Input Impedance

Description
Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential.

G C E

TO-3P

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM PD TJ Tstg TL
Notes:

TC 25 C unless otherwise noted

Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current
(Note 1)

FGA90N30
300 30 TC 25 C TC 25 C TC 25 C TC 100 C 90 220 219 87 -55 to 150 -55 to 150 300

Units
V V A A W W C C C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

(1) Repetitive test , pulse width 100usec , Duty 0.2 Ic pulse limited by max Tj

Thermal Characteristics
Symbol
RJC(IGBT) RJA

Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Ambient

Typ.
---

Max.
0.57 40

Units
C/W C/W

2006 Fairchild Semiconductor Corporation

FGA90N30 Rev. B

www.fairchildsemi.com