FGAF40N60UFD

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FGAF40N60UFD

IGBT
FGAF40N60UFD
Ultrafast IGBT
General Description
Fairchild s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Features
High speed switching Low saturation voltage : VCE(sat) 2.3 V IC 20A High input impedance CO-PAK, IGBT with FRD : trr 50ns (typ.)

Applications
AC DC motor controls, general purpose inverters, robotics, and servo controls.

TO-3PF
G C E

E
TC 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds

TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGAF40N60UFD 600 20 40 20 160 15 160 100 40 -55 to 150 -55 to 150 300

Units V V A A A A A W W C C C

Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 1.2 2.6 40 Units C/W C/W C/W

2004 Fairchild Semiconductor Corporation

FGAF40N60UFD Rev. A