FGB40N6S2

FGH40N6S2 / FGP40N6S2 / FGB40N6S2

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FGH40N6S2 / FGP40N6S2 / FGB40N6S2

August 2003

FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits

Features
100kHz Operation at 390V, 24A 200kHZ Operation at 390V, 18A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 85ns at TJ 125oC Low Gate Charge . . . . . . . . . 35nC at VGE 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ Low Conduction Loss

IGBT (co-pack) formerly Developmental Type TA49438

Package
TO-247
E C G

Symbol
TO-220AB
E C G
C

TO-263AB
G

G E

COLLECTOR (Back-Metal)

COLLECTOR (Flange)

Device Maximum Ratings TC 25 C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC 25 C Collector Current Continuous, TC 110 C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ 150 C, Figure 2 Pulsed Avalanche Energy, ICE 30A, L 1mH, VDD 50V Power Dissipation Total TC 25 C Power Dissipation Derating TC 25 C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 75 35 180 20 30 100A at 600V 260 290 2.33 -55 to 150 -55 to 150 mJ W W/ C C C Units V A A A V V

CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. Pulse width limited by maximum junction temperature.
2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5