FGD3N60LSD

FGD3N60LSD IGBT

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FGD3N60LSD IGBT

September 2006

FGD3N60LSD
IGBT
Features
High Current Capability Very Low Saturation Voltage : VCE(sat) 1.2 V IC 3A High Input Impedance

Description
Fairchild s Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

Applications
HID Lamp Applications Piezo Fuel Injection Applications

G
G E

D-PAK
E

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Derating Factor Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds TC 25 C TC 100 C TC 25 C TC 100 C
(1)

FGD3N60LSD
600 25 6 3 25 3 25 40 0.32 -55 to 150 -55 to 150 250

Units
V V A A A A A W W/ C C C C

Thermal Characteristics
Symbol
RJC (IGBT) RJA
Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material)

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)

Typ.
---

Max.
3.1 100

Units
C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGD3N60LSD Rev. B