FGH20N6S2D

FGH20N6S2D / FGP20N6S2D / FGB20N6S2D

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FGH20N6S2D / FGP20N6S2D / FGB20N6S2D

July 2002

FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits

Features
100kHz Operation at 390V, 7A 200kHZ Operation at 390V, 5A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 85ns at TJ 125oC Low Gate Charge . . . . . . . . . 30nC at VGE 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Low Conduction Loss Low Eon Soft Recovery Diode

IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469)

Package
TO-247
E C G

Symbol
C

TO-220AB

E C G

TO-263AB
G

G E E

Device Maximum Ratings TC 25 C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC 25 C Collector Current Continuous, TC 110 C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ 150 C, Figure 2 Pulsed Avalanche Energy, ICE 7.0A, L 4mH, VDD 50V Power Dissipation Total TC 25 C Power Dissipation Derating TC 25 C Operating Junction Temperature Range Storage Junction Temperature Range

COLLECTOR (FLANGE)
Ratings 600 28 13 40 20 30 35A at 600V 100 125 1.0 -55 to 150 -55 to 150 Units V A A A V V A mJ W W/ C C C

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. Pulse width limited by maximum junction temperature.
2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1