FGH50N3

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FGH50N3

July 2002

FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485

Features
Low VCE(SAT) . . . . . . . . . . . . . . . . . . . 1.4V max Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . 200 J SCWT ( TJ 125 C). . . . . . . . . . . . . . . . . 8 s 300V Switching SOA Capability Positive VCE(SAT) Temperature Coefficient above 50A

Package
E C G

Symbol
C

TO-247 COLLECTOR (FLANGE)
G

Device Maximum Ratings TC 25 C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS EARV PD TJ TSTG tSC Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC 25 C Collector Current Continuous, TC 110 C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ 150 C, Figure 2 Single Pulse Avalanche Energy, ICE 30A, L 1.78mH, VDD 50V Single Pulse Reverse Avalanche Energy, IEC 30A, L 1.78mH, VDD 50V Power Dissipation Total TC 25 C Power Dissipation Derating TC 25 C Operating Junction Temperature Range Storage Junction Temperature Range Short Circuit Withstand Time (Note 2) Ratings 300 75 75 240 20 30 150A at 300V 800 800 463 3.7 -55 to 150 -55 to 150 8 mJ mJ W W/ C C C s Units V A A A V V

CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) 180V, TJ 125 C, VGE 12Vdc, RG 5

2002 Fairchild Semiconductor Corporation

FGH50N3 Rev. A