FGL40N150D

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FGL40N150D

IGBT
FGL40N150D
General Description
Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications.

Features
High speed switching Low saturation voltage : VCE(sat) 3.5 V IC 40A High input impedance Built-in fast recovery diode

Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.

TO-264
G C E
TC 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds

TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGL40N150D 1500 25 40 20 120 10 100 200 80 -55 to 150 -55 to 150 300

Units V V A A A A A W W C C C

Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.625 0.83 25 Units C/W C/W C/W

2002 Fairchild Semiconductor Corporation

FGL40N150D Rev. A1