FGL60N100BNTD

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FGL60N100BNTD

IGBT
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications

Features
High Speed Switching Low Saturation Voltage : VCE(sat) 2.5 V IC 60A High Input Impedance Built-in Fast Recovery Diode

Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

G
TO-264
G C E
TC 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds

TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGL60N100BNTD 1000 25 60 42 200 15 180 72 -55 to 150 -55 to 150 300

Units V V A A A A W W C C C

Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.69 2.08 25 Units C/W C/W C/W

2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev.A1

www.fairchildsemi.com