FGP30N6S2

FGH30N6S2 / FGP30N6S2 / FGB30N6S2

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FGH30N6S2 / FGP30N6S2 / FGB30N6S2

August 2003

FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits

Features
100kHz Operation at 390V, 14A 200kHZ Operation at 390V, 9A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 90ns at TJ 125oC Low Gate Charge . . . . . . . . . 23nC at VGE 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ Low Conduction Loss

Formerly Developmental Type TA49367.

Package
TO-247
E C G

Symbol
C

TO-220AB

E C G

TO-263AB
G
G E

COLLECTOR (Back-Metal)

COLLECTOR (Flange)

Device Maximum Ratings TC 25 C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC 25 C Collector Current Continuous, TC 110 C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ 150 C, Figure 2 Pulsed Avalanche Energy, ICE 20A, L 1.3mH, VDD 50V Power Dissipation Total TC 25 C Power Dissipation Derating TC 25 C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 45 20 108 20 30 60A at 600V 150 167 1.33 -55 to 150 -55 to 150 mJ W W/ C C C Units V A A A V V

CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. Pulse width limited by maximum junction temperature.
2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1