FGP90N30 300V, 90A PDP IGBT

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FGP90N30 300V, 90A PDP IGBT

January 2006

FGP90N30 300V, 90A PDP IGBT
Features
High Current Capability Low saturation voltage : VCE(sat) 1.1 V IC 20A High input impedance Fast switching

General Description
Employing Unified IGBT Technology, Fairchild s PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.

Application
. PDP System

C

G
1

TO-220 2.Collector 3.Emitter

1.Gate

E

Absolute Maximum Ratings
Symbol VCES VGES IC IC pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds FGP90N30 300 20 90 130 192 77 -55 to 150 -55 to 150 300 Units V V A A W W C C C

TC 25 C TC 25 C TC 25 C TC 100 C

Thermal Characteristics
Symbol RJC(IGBT) RJA Notes (1) Repetitive test , pulse width 100usec , Duty 0.5 Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.65 62.5 Units C/W C/W

2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGP90N30 Rev. A

FGP90N30 Datasheet Fairchild Download PDF

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FGP90N30 DATASHEET