FGPF120N30

FGPF120N30 300V, 120A PDP IGBT

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FGPF120N30 300V, 120A PDP IGBT

January 2006

FGPF120N30
300V, 120A PDP IGBT
Features
High Current Capability Low saturation voltage : VCE(sat) 1.1 V IC 25A High input impedance Fast switching

General Description
Employing Unified IGBT Technology, Fairchild s PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.

Application
PDP SYSTEM

TO-220F 1.Gate 2.Collector 3.Emitter

G E

Absolute Maximum Ratings
Symbol VCES VGES IC IC pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds FGPF120N30 300 20 120 180 60 24 -55 to 150 -55 to 150 300 Units V V A A W W C C C

TC 25 C TC 25 C TC 25 C TC 100 C

Thermal Characteristics
Symbol RJC(IGBT) RJA Notes (1) Repetitive test , pulse width 100usec , Duty 0.5 Ic pulse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.1 62.5 Units C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGPF120N30 Rev. A