FGPF30N30 300V, 30A PDP IGBT

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FGPF30N30 300V, 30A PDP IGBT

September 2006

FGPF30N30
300V, 30A PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat) 1.4V IC 20A High Input Impedance Fast switching RoHS Complaint

General Description
Employing Unified IGBT Technology, Fairchild s PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution loss is essential.

Application
. PDP System

TO-220F

1 1.Gate

2.Collector

3.Emitter

Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds TC 25oC TC 25oC TC 100oC

Description
Collector-Emitter Voltage

FGPF30N30
300 30 80 46 18.5 -55 to 150 -55 to 150 300

Units
V V A W W
o

C

oC o

C

Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1)Repetitive test , pluse width 100usec , Duty 0.1 Ic pluse limited by max Tj

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Typ.
---

Max.
2.7 62.5

Units
o

C/W

oC/W

2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGPF30N30 Rev. A

FGPF30N30 Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FGPF30N30 datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FGPF30N30

FGPF30N30 DATASHEET