FGPF70N30

FGPF70N30 300V, 70A PDP IGBT

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FGPF70N30 300V, 70A PDP IGBT

October 2006

FGPF70N30
300V, 70A PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat) 1.4V IC 40A High Input Impedance Fast switching RoHS Complaint

General Description
Employing Unified IGBT Technology, Fairchild s PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution loss is essential.

Application
. PDP System

TO-220F

1 1.Gate

2.Collector

3.Emitter

Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds TC 25oC TC 25oC TC 100oC

Description
Collector-Emitter Voltage

FGPF70N30
300 30 160 52 20.8 -55 to 150 -55 to 150 300

Units
V V A W W
o

oC o

Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1)Repetitive test , pluse width 100usec , Duty 0.1 Ic pluse limited by max Tj

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Typ.
---

Max.
2.4 62.5

Units
o o

C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com