FGPF7N60LSD

FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK

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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK

January 2006

FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
Features
Low saturation voltage : VCE(sat) 1.4 V IC 7A High input impedance CO-PAK, IGBT with FRD : trr 50 ns (typ.)

Description
Fairchild s Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature.

Applications
Lamp applications (Hallogen Dimmer)

G
TO-220F 1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGPF7N60LSD
600 20 14 7 21 12 60 45 18 -55 to 150 -55 to 150 300

Units
V V A A A A A W W C C C

Thermal Characteristics
Symbol
RJC (IGBT) RJC(DIODE) RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)

Typ.
----

Max.
2.8 4.5 62.5

Units
C/W C/W C/W

Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material)

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGPF7N60LSD Rev. A